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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : [70]PCBM

[70]PCBM[P2683]

[6,6]-Phenyl-C71-butyric Acid Methyl Ester (mixture of isomers)
[for organic electronics]
[70]PCBM (mixture of isomers)
CAS RN: 609771-63-3
Product Number: P2683

Performance of [70]PCBM[P2683]-based OFETs

Performance of [70]PCBM[P2683]-based OFETs


Table. OFETs Characteristics of [70]PCBM[P2683]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodSpin-coating Device ConfigurationTCBG SAM TreatmentHMDS Polarityn μ (cm2 V−1 s−1)2.5 × 10-2 Vth (V)8.8 Ion/Ioff104

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of spin-coated [70]PCBM[P2683]-based OFETs

< Substrate>
  • HMDS-treated Si/SiO2 (thickness of SiO2: 200 nm)

< Self-Assembly Monolayer (SAM) Treatment>
  • 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) [H0089]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in HMDS (16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Spin-Coating>
  • [70]PCBM[P2683], 15 mg/ml, Chloroform
  • Spin-coating condition: 2000 RPM, 60 sec, N2

< Vacuum Deposition>
  • Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−4 Pa)

< Device configuration>
  • [n+-Si/SiO2 (200 nm) / [70]PCBM[P2683] / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

P2683 [70]PCBM (mixture of isomers)
H0089 1,1,1,3,3,3-Hexamethyldisilazane (HMDS)

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