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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Ph-BTBT-10

Ph-BTBT-10 [D5491]

2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene
[for organic electronics]
Ph-BTBT-10
CAS RN: 1398395-83-9
Product Number: D5491

Performance of Ph-BTBT-10 [D5491]-based OFETs

Performances of Ph-BTBT-10 [D5491]-based OFETs


Table. OFETs Characteristics of Ph-BTBT-10 [D5491]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub(°C) Annealing Temp.a(°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub(°C)60 Annealing Temp.a(°C)120 Polarityp μ (cm2 V−1 s−1)6.1 Vth (V)‒12 Ion/Ioff106
Entry2 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM TreatmentODTS Tsub(°C)60 Annealing Temp.a(°C)120 Polarityp μ (cm2 V−1 s−1)12.0 Vth (V)‒22 Ion/Ioff107
aPost-annealing temperature.

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of vacuum-deposited Ph-BTBT-10 [D5491]-based OFETs

< Substrate>
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)
  • ODTS-treated Si/SiO2 (thickness of SiO2: 200 nm)

< Self-Assembly Monolayer (SAM) Treatment>
  • n-Octyltrichlorosilane (ODTS) [T3815]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in ODTS solution (0.01 M toluene, 16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Vacuum Deposition>
  • Deposition rate of Ph-BTBT-10 [D5491] 0.1 Å/s (under a pressure of∼10−5 Pa)
  • Substrate temperature during deposition: 60 °C
  • Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)

< Post-Annealing Treatment>
  • Annealing condition: 120 ºC, 5 min, N2

< Device configuration>
  • [n+-Si/SiO2 (200 nm) / Ph-BTBT-10 [D5491] (40 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
    ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

D5491 2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene [for organic electronics]
T3815 n-Octyltrichlorosilane (ODTS)

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