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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : P3HT

P3HT [P2513]

Poly(3-hexylthiophene-2,5-diyl) (regioregular)
P3HT
CAS RN: 125321-66-6
Product Number: P2513

Performance of P3HT (regioregular) [P2513]-based OFETs

Fabrication method and evaluation of vacuum-deposited P3HT [P2513]



Table. OFETs Characteristics of P3HT (regioregular) [P2513]

Entry Fabrication Method Device Configuration SAM Treatment Annealing Temp.a (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodSpin-coating Device ConfigurationTCBG SAM TreatmentOTS Annealing Temp.a (°C)100 Polarityp μ (cm2 V−1 s−1)0.12 Vth (V)9.9 Ion/Ioff103
aPost-annealing temperature.

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of spin-coated P3HT (regioregular) [P2513]-based OFETs

< Substrate >
  • OTS-treated Si/SiO2 (thickness of SiO2：300 nm)

< Self-Assembly Monolayer (SAM) Treatment >
  • n-Octyltrichlorosilane (OTS) [O0168]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in OTS solution (0.01 M toluene, 16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Spin-Coating >
  • P3HT (regioregular) [P2513] 10 mg/ml, 1,2,4-Trichlorobenzene:Chloroform (2:98) mixed solvent
  • Spin-coating condition: 1500 RPM, 60 sec, N2

< Vacuum Deposition >
  • Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−4 Pa)

< Post-Annealing Treatment >
  • Annealing condition: 100 ºC, 30 min, N2

< Device Configuration >
  • [n+-Si/SiO (300 nm) / P3HT (regioregular) [P2513] (100 nm) / Au (40 nm)]
  • Bottom-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition >
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
    ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

P2513 Poly(3-hexylthiophene-2,5-diyl) (regioregular)
O0168 n-Octyltrichlorosilane (OTS)

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