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Device fabrication methods and device characteristics：DPh-BTBT
2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene
(purified by sublimation)
DPh-BTBT (purified by sublimation)
CAS RN: 900806-58-8
Product Number: D3526
Performance of DPh-BTBT [D3526]-based OFETs
| Entry | Fabrication Method | DeviceConfiguration | SAM Treatment | Tsub (°C) | Annealing Temp.a(°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare |
Tsub(°C)100 | Annealing Temp.a(°C)w/o | Polarityp | μ (cm2 V−1 s−1)0.18 | Vth (V)‒24 | Ion/Ioff105 |
| Entry2 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare |
Tsub(°C)100 | Annealing Temp.a(°C)120 | Polarityp | μ (cm2 V−1 s−1)0.21 | Vth (V)‒22 | Ion/Ioff106 |
Figure. Transfer curves in the saturated region
Experimental details
Fabrication and evaluation of vacuum-deposited DPh-BTBT [D3526]-based OFETs
< Substrate >
< Vacuum deposition >
< Device configuration >
< Evaluation condition >
< Substrate >
- Bare Si/SiO2 (thickness of SiO2: 200 nm)
< Vacuum deposition >
- Deposition rate of DPh-BTBT [D3526]: 0.3 Å/s, (under a pressure of ∼10−4 Pa)
- Substrate temperature during deposition: 100 °C
- Deposition rate of Au: 0.7 Å/s
< Device configuration >
- [n+-Si/SiO2 (200 nm) / DPh-BTBT [D3526](60 nm) / Au (60 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation condition >
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
ID = (W/2L) μ Ci (VG − Vth)2