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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Ph-BTBT-10
![Ph-BTBT-10 [D5491]](/structure-300/D5491.jpg)
2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene
[for organic electronics]
Ph-BTBT-10
CAS RN: 1398395-83-9
Product Number: D5491
Performance of Ph-BTBT-10 [D5491]-based OFETs
![Performances of Ph-BTBT-10 [D5491]-based OFETs](/assets/cms-images/D5491-device-method-structure-en.png)
Table. OFETs Characteristics of Ph-BTBT-10 [D5491]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub(°C) | Annealing Temp.a(°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare |
Tsub(°C)60 | Annealing Temp.a(°C)120 | Polarityp | μ (cm2 V−1 s−1)6.1 | Vth (V)‒12 | Ion/Ioff106 |
| Entry2 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM TreatmentODTS | Tsub(°C)60 | Annealing Temp.a(°C)120 | Polarityp | μ (cm2 V−1 s−1)12.0 | Vth (V)‒22 | Ion/Ioff107 |
Figure. Transfer curves in the saturated region
Experimental details
Fabrication and evaluation of vacuum-deposited Ph-BTBT-10 [D5491]-based OFETs
< Substrate>
< Self-Assembly Monolayer (SAM) Treatment>
< Vacuum Deposition>
< Post-Annealing Treatment>
< Device configuration>
< Evaluation condition>
< Substrate>
- Bare Si/SiO2 (thickness of SiO2: 200 nm)
- ODTS-treated Si/SiO2 (thickness of SiO2: 200 nm)
< Self-Assembly Monolayer (SAM) Treatment>
- n-Octyltrichlorosilane (ODTS) [T3815]
- Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
- Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
- Exposure to vapor (IPA, 3 min)
- UV/O3 treatment (1 h)
- Immersion in ODTS solution (0.01 M toluene, 16 h, N2)
- Ultrasonication (Toluene, Acetone, IPA, 10 min each)
< Vacuum Deposition>
- Deposition rate of Ph-BTBT-10 [D5491] 0.1 Å/s (under a pressure of∼10−5 Pa)
- Substrate temperature during deposition: 60 °C
- Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)
< Post-Annealing Treatment>
- Annealing condition: 120 ºC, 5 min, N2
< Device configuration>
- [n+-Si/SiO2 (200 nm) / Ph-BTBT-10 [D5491] (40 nm) / Au (40 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation condition>
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
ID = (W/2L) μ Ci (VG − Vth)2