Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 10-QTP-10

Fabrication and evaluation of spin-coated 10-QTP-10 [D4888]-based OFETs

< Substrate>

• Bare Si/SiO₂ (thickness of SiO_2: 200 nm)

< Vacuum Deposition>

• Deposition rate of 10-QTP-10 [D4888] 0.3 Å/s (under a pressure of∼10⁻⁴ Pa)
• Substrate temperature during deposition: RT
• Deposition rate of Au: 0.6 Å/s (under a pressure of∼10⁻⁴ Pa)

< Device Configuration>

• [n⁺-Si/SiO₂ (200 nm) / 10-QTP-10 [D4888] (60 nm) / Au (40 nm)]
• Top-Contact Bottom-Gate Type (TCBG)
• Channel Length: 50 μm
• Channel width: 1.5 mm

< Evaluation Condition>

• Under N₂
• Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: I_D = (W/2L) μ C_i (V_G − V_th)²