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CAS RN: 1395881-58-9 | Product Number: B4907
3,3'-Bi[1,4]benzoxazino[2,3,4-kl]phenoxazine
![3,3'-Bi[1,4]benzoxazino[2,3,4-kl]phenoxazine No-Image](/medias/B4907.jpg?context=bWFzdGVyfHJvb3R8NTI5MDN8aW1hZ2UvanBlZ3xhR0UwTDJobFlTODRPVEl3TXpJNE5qTTBNems0TDBJME9UQTNMbXB3Wnd8YWRiMDhlNDIyOWExZDYxY2FiZDFhZGVkMzk1NWZhYzQ4MGE0N2QzNWUwOWM1NDQyYWVkMTA1MzI0MTllYzgwYw)
Purity:
Synonyms:
- HN-D2
Product Documents:
Size | Unit Price | Shanghai | Tianjin | Japan* |
---|---|---|---|---|
200MG |
¥1,570.00
|
1 | Contact Us | 3 |
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Product Number | B4907 |
Molecular Formula / Molecular Weight | C__3__6H__2__0N__2O__4 = 544.57 |
Physical State (20 deg.C) | Solid |
Storage Temperature | Room Temperature (Recommended in a cool and dark place, <15°C) |
Condition to Avoid | Light Sensitive |
CAS RN | 1395881-58-9 |
Reaxys Registry Number | 27410864 |
PubChem Substance ID | 354333532 |
Specifications
Appearance | Light orange to Yellow to Green powder to crystal |
Elemental analysis(Nitrogen) | 4.90 to 5.40 % |
Properties (reference)
Melting Point | 340 °C |
Maximum Absorption Wavelength | 390 nm (CH__2Cl__2) |
GHS
Related Laws:
Transport Information:
Customs Control Conditions (Q) |
Application
Pseudoplanar Hole Conductor: HN-D
Wakamiya et al. developed pseudoplanar materials (1, 2) in which those structures are intermediate between planar and propeller types.1,2) They partially introduced an ether-bridged structure into a conventional propeller-type molecule, N,N,N′,N′-tetraphenylbenzidine derivative. The pseudoplanar structure provides one-dimensionally-arranged on-top π-stacking in the crystal. These materials show relatively high mobility along the molecular stacking direction in the crystal, and also demonstrate large anisotropy of carrier mobility in the amorphous film. It was considered that the pseudoplanar materials (1, 2) maintain a molecular stacking along the perpendicular direction with respect to a device substrate in the amorphous film. Accordingly, they are expected to be useful for organic solar cell and organic light-emitting diode devices, because these devices require high carrier mobility in the perpendicular direction toward a device substrate.
References
- 1)A. Wakamiya, H. Nishimura, T. Fukushima, F. Suzuki, A. Saeki, S. Seki, I. Osaka, T. Sasamori, M. Murata, Y. Murata, H. Kaji, Angew. Chem. Int. Ed. 2014, 53, 5800.
- 2)A. Wakamiya, H. Nishimura, Y. Murata, T. Fukushima, H. Kaji, Kyoto University, JP Patent 5591996.
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