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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : trans-DBPen

trans-DBPen [D5488]

Dibenzo[a,l]pentacene
trans-DBPen
CAS RN: 227-09-8
Product Number: D5488

Performance of trans-DBPen [D5488]-based OFETs

Fabrication method and evaluation of vacuum-deposited trans-DBPen [D5488]



Table. OFETs Characteristics of trans-DBPen [D5488]

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Annealing Temp.a (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum
deposition		 Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)60 Annealing Temp.a (°C)120 Polarityp μ (cm2 V−1 s−1)0.16 Vth (V)‒19 Ion/Ioff106
Entry2 Fabrication MethodVacuum
deposition		 Device ConfigurationTCBG SAM TreatmentOTS Tsub (°C)60 Annealing Temp.a (°C)120 Polarityp μ (cm2 V−1 s−1)0.44 Vth (V)‒9.8 Ion/Ioff107
Entry3 Fabrication MethodVacuum
deposition		 Device ConfigurationTCBG SAM TreatmentODTS Tsub (°C)60 Annealing Temp.a (°C)120 Polarityp μ (cm2 V−1 s−1)0.19 Vth (V)‒6.1 Ion/Ioff106
aPost-annealing temperature.

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of spin-coated trans-DBPen [D5488]-based OFETs

< Substrate>
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)
  • OTS-treated Si/SiO2 (thickness of SiO2: 200 nm)
  • ODTS-treated Si/SiO2 (thickness of SiO2: 200 nm)

< Self-Assembly Monolayer (SAM) Treatment>
  • n-Octyltrichlorosilane (OTS) [O0168]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in OTS solution (0.01 M toluene, 16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)
  • n-Octyltrichlorosilane (ODTS) [T3815]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in ODTS solution (0.01 M toluene, 16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Vacuum Deposition>
  • Deposition rate of trans-DBPen [D5488] 0.3 Å/s (under a pressure of∼10−4 Pa)
  • Substrate temperature during deposition: 60 °C
  • Deposition rate of Au: 0.7 Å/s

< Post-Annealing Treatment>
  • Annealing condition: 120 ºC, 5 min, N2

< Device Configuration>
  • [n+-Si/SiO2 (200 nm) / trans-DBPen [D5488] (60 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2


TCI products used in this experiment

O0168 n-Octyltrichlorosilane (OTS)
T3815 n-Octyltrichlorosilane (ODTS)
D5488 Dibenzo[a,l]pentacene

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