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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 6T

6T [S0504]

α-Sexithiophene (purified by sublimation)
6T
CAS RN: 88493-55-4
Product Number: S0504

Performance of 6T [S0504]-based OFETs

Fabrication method and evaluation of vacuum-deposited 6T [S0504]



Table. OFETs Characteristics of 6T [S0504]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)RT Polarityp μ (cm2 V−1 s−1)2.3 × 10-2 Vth (V)-14 Ion/Ioff106

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of vacuum-deposited 6T [S0504]-based OFETs

< Substrate >
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)

< Vacuum Deposition >
  • Deposition rate of 6T [S0504] 0.2 Å/s (under a pressure of∼10−4 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 1.0 Å/s (under a pressure of∼10−4 Pa)

< Device Configuration >
  • [n+-Si/SiO2 (200 nm) / 6T [S0504] (60 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition >
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
    ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

S0504 6T

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