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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 8-QTP-8

8-QTP-8 [D4877]

5,5'''-Di-n-octyl-2,2':5',2'':5'',2'''-quaterthiophene
8-QTP-8
CAS RN: 882659-01-0
Product Number: D4877

Performance of 8-QTP-8 [D4877]-based OFETs

Fabrication method and evaluation of vacuum-deposited 8-QTP-8 [D4877]



Table. OFETs Characteristics of 8-QTP-8 [D4877]

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare
Tsub (°C)RT Polarityp μ (cm2 V−1 s−1)0.11 Vth (V)‒7.0 Ion/Ioff104
 
Figure. Transfer curves in the saturated region and output curves at different gate voltages

Figure. Transfer curves in the saturated region and output curves at different gate voltages


Experimental details

Fabrication and evaluation of spin-coated 8-QTP-8 [D4877]-based OFETs

< Substrate>
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)

< Vacuum Deposition>
  • Deposition rate of 8-QTP-8 [D4877] 0.3 Å/s (under a pressure of∼10−4 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 0.8 Å/s (under a pressure of∼10−4 Pa)

< Device Configuration>
  • [n+-Si/SiO2 (200 nm) / 8-QTP-8 [D4877] (60 nm) / Au (40 nm)]
  • Bottom-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VGVth)2
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