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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : anti-DMADT

anti-DMADT [D4617]

2,8-Dimethylanthra[2,3-b:6,7-b']dithiophene (purified by sublimation)
anti-DMADT
CAS RN: 1019983-99-3
Product Number: D4617

Performance of anti-DMADT [D4617]-based OFETs

Fabrication method and evaluation of vacuum-deposited anti-DMADT [D4617]



Table. OFETs Characteristics of anti-DMADT [D4617]

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Annealing Temp.a (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum
deposition		 Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)RT Annealing Temp.a (°C)w/o Polarityp μ (cm2 V−1 s−1)0.11 Vth (V)‒14 Ion/Ioff104
Entry2 Fabrication MethodVacuum
deposition		 Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)RT Annealing Temp.a (°C)120 Polarityp μ (cm2 V−1 s−1)0.11 Vth (V)‒7.7 Ion/Ioff104
aPost-annealing temperature.

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of spin-coated anti-DMADT [D4617]-based OFETs

< Substrate>
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)
< Vacuum Deposition>
  • Deposition rate of anti-DMADT [D4617] 0.3 Å/s (under a pressure of∼10−4 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 1.0 Å/s (under a pressure of∼10−4 Pa)
< Post-Annealing Treatment>
  • Annealing condition: 120 ºC, 5 min, N2
< Device Configuration>
  • [n+-Si/SiO2 (200 nm) / anti-DMADT [D4617] (60 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm
< Evaluation Condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2


TCI products used in this experiment

D4617 anti-DMADT

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