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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Pentacene

TIPS Pentacene [P2524]

Performance of Pentacene [P2524]-based OFETs

Performances of Pentacene [P2524]-based OFETs



Table. OFETs Characteristics of Pentacene [P2524]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)RT Polarityp μ (cm2 V−1 s−1)0.33 Vth (V)‒15 Ion/Ioff105
Entry2 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM TreatmentOTS Tsub (°C)RT Polarityp μ (cm2 V−1 s−1)1.2 Vth (V)‒7.0 Ion/Ioff106

Figure. Transfer curves in the saturated region and output curves at different gate voltages
Figure. Transfer curves in the saturated region and output curves at different gate voltages

Experimental details

Fabrication and evaluation of vacuum-deposited Pentacene [P2524]-based OFETs

< Substrate >
  • Bare Si/SiO2 (thickness of SiO2 : 200 nm)
  • OTS-treated Si/SiO2 (thickness of SiO2：200 nm)

< Self-Assembly Monolayer (SAM) Treatment >
  • n-Octyltrichlorosilane (OTS) [O0168 ]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3min)
    4. UV/O3 treatment (1h)
    5. Immersion in OTS solution (0.01 M toluene, 16h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Vacuum Deposition >
  • Deposition rate of Pentacene [P2524 ]: 0.1 Å/s (under a pressure of∼10−5 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 0.3 Å/s, (under a pressure of ∼10−4 Pa)

< Device Configuration >
  • [n+-Si/SiO2 (200 nm) / Pentacene [P2524 ] (60 nm) / Au (60 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm: 1.5 mm

< Evaluation Condition >
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

P2524 Pentacene (99.999%, trace metals basis) (purified by sublimation)
O0168 n-Octyltrichlorosilane (OTS)

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