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CAS RN: 1395881-58-9 | Product Number: B4907

3,3'-Bi[1,4]benzoxazino[2,3,4-kl]phenoxazine


Purity:
Synonyms:
  • HN-D2
Product Documents:
200MG
$178.00
2   1   It can be shipped in about 5-6 months after ordering
1G
$620.00
0   4   It can be shipped in about 5-6 months after ordering

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* The storage conditions are subject to change without notice.


Product Number B4907
Molecular Formula / Molecular Weight C__3__6H__2__0N__2O__4 = 544.57 
Physical State (20 deg.C) Solid
Storage Temperature Room Temperature (Recommended in a cool and dark place, <15°C)
Condition to Avoid Light Sensitive
Packaging and Container 1G-Glass Bottle with Plastic Insert (View image)
CAS RN 1395881-58-9
Reaxys Registry Number 27410864
PubChem Substance ID 354333532
Specifications
Appearance Light orange to Yellow to Green powder to crystal
Elemental analysis(Nitrogen) 4.90 to 5.40 %
Properties (reference)
Melting Point 340 °C
Maximum Absorption Wavelength 390 nm (CH__2Cl__2)
GHS
Related Laws:
Transport Information:
H.S.code* 2934.99-000
*This code is applied to the products when TCI exports from Japan and not for import in your country.
Application
Pseudoplanar Hole Conductor: HN-D

Wakamiya et al. developed pseudoplanar materials (1, 2) in which those structures are intermediate between planar and propeller types.1,2) They partially introduced an ether-bridged structure into a conventional propeller-type molecule, N,N,N′,N′-tetraphenylbenzidine derivative. The pseudoplanar structure provides one-dimensionally-arranged on-top π-stacking in the crystal. These materials show relatively high mobility along the molecular stacking direction in the crystal, and also demonstrate large anisotropy of carrier mobility in the amorphous film. It was considered that the pseudoplanar materials (1, 2) maintain a molecular stacking along the perpendicular direction with respect to a device substrate in the amorphous film. Accordingly, they are expected to be useful for organic solar cell and organic light-emitting diode devices, because these devices require high carrier mobility in the perpendicular direction toward a device substrate.

References


PubMed Literature


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