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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 12-QTP-12

12-QTP-12 [D4889]

5,5'''-Didodecyl-2,2':5',2'':5'',2'''-quaterthiophene
12-QTP-12
CAS RN: 153561-79-6
Product Number: D4889

Performance of 12-QTP-12 [D4889]-based OFETs

Fabrication method and evaluation of vacuum-deposited 12-QTP-12 [D4889]



Table. OFETs Characteristics of 12-QTP-12 [D4889]

Entry Fabrication Method Device Configuration SAM Treatment Tsub (°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub (°C)RT Polarityp μ (cm2 V−1 s−1)0.15 Vth (V)‒13 Ion/Ioff105

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region and output curves at different gate voltages


Experimental details

Fabrication and evaluation of spin-coated 12-QTP-12 [D4889]-based OFETs

< Substrate>
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)

< Vacuum Deposition>
  • Deposition rate of 12-QTP-12 [D4889] 0.3 Å/s (under a pressure of∼10−4 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 1.0 Å/s (under a pressure of∼10−4 Pa)

< Device Configuration>
  • [n+-Si/SiO2 (200 nm) / 12-QTP-12 [D4889] (60 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation Condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

D4889 5,5'''-Didodecyl-2,2':5',2'':5'',2'''-quaterthiophene

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