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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Device fabrication methods and device characteristics：DPh-BTBT

D3526

2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene
(purified by sublimation)
DPh-BTBT (purified by sublimation)
CAS RN: 900806-58-8
Product Number: D3526

Performance of DPh-BTBT [D3526]-based OFETs


Entry Fabrication Method DeviceConfiguration SAM Treatment Tsub (°C) Annealing Temp.a(°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub(°C)100 Annealing Temp.a(°C)w/o Polarityp μ (cm2 V−1 s−1)0.18 Vth (V)‒24 Ion/Ioff105
Entry2 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM Treatmentw/o
Bare		 Tsub(°C)100 Annealing Temp.a(°C)120 Polarityp μ (cm2 V−1 s−1)0.21 Vth (V)‒22 Ion/Ioff106
aPost-annealing temperature.

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of vacuum-deposited DPh-BTBT [D3526]-based OFETs

< Substrate >
  • Bare Si/SiO2 (thickness of SiO2: 200 nm)

< Vacuum deposition >
  • Deposition rate of DPh-BTBT [D3526]: 0.3 Å/s, (under a pressure of ∼10−4 Pa)
  • Substrate temperature during deposition: 100 °C
  • Deposition rate of Au: 0.7 Å/s

< Device configuration >
  • [n+-Si/SiO2 (200 nm) / DPh-BTBT [D3526](60 nm) / Au (60 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation condition >
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
    ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

P3526 2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene (purified by sublimation)

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