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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Fullerene C70

Fullerene C70 [F1233]

Fullerene C70 (purified by sublimation)
[for organic electronics]
Fullerene C70
CAS RN: 115383-22-7
Product Number: F1233

Performances of C70 [F1233]-based OFETs

Performances of C70 [F1233]-based OFETs


Table. OFETs Characteristics of Fullerene C70 [F1233]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub(°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM TreatmentHMDS Tsub(°C)RT Polarityn μ (cm2 V−1 s−1)0.52 Vth (V)6.7 Ion/Ioff106
Entry2 Fabrication MethodVacuum deposition Device ConfigurationTCBG SAM TreatmentOTS Tsub(°C)RT Polarityn μ (cm2 V−1 s−1)0.55 Vth (V)8.3 Ion/Ioff106

Figure. Transfer curves in the saturated region）

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of vacuum-deposited Fullerene C70 [F1233]-based OFETs

< Substrate>
  • HMDS-treated Si/SiO2 (thickness of SiO2: 200 nm)
  • OTS-treated Si/SiO2 (thickness of SiO2: 200 nm)

< Self-Assembly Monolayer (SAM) Treatment>
  • 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) [H0089]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in HMDS (16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)
  • n-Octyltrichlorosilane (OTS) [O0168]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in OTS solution (0.01 M toluene, 16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Vacuum Deposition>
  • Deposition rate of C70 [F1233] 0.2 Å/s (under a pressure of∼10−5 Pa)
  • Substrate temperature during deposition: RT
  • Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)

< Device configuration>
  • [n+-Si/SiO2 (200 nm) / C70 [F1233] (40 nm) / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

F1233 Fullerene C70 (purified by sublimation) [for organic electronics]
H0089 1,1,1,3,3,3-Hexamethyldisilazane (HMDS)
O0168 n-Octyltrichlorosilane (OTS)

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