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Organic Transistor > Organic Transistor (OFET) Device Fabrication and Evaluation >

Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : [60]PCBM

[60]PCBM [P2682]

[6,6]-Phenyl-C61-butyric Acid Methyl Ester
[for organic electronics]
[60]PCBM
CAS RN: 115383-22-7
Product Number: P2682

Performance of [60]PCBM [P2682]-based OFETs

Performances of [60]PCBM [P2682]-based OFETs


Table. OFETs Characteristics of [60]PCBM [P2682]-based OFETs

Entry Fabrication Method Device Configuration SAM Treatment Tsub(°C) Polarity μ (cm2 V−1 s−1) Vth (V) Ion/Ioff
Entry1 Fabrication MethodSpin-coating Device ConfigurationTCBG SAM TreatmentHMDS Tsub(°C)RT Polarityn μ (cm2 V−1 s−1)2.4 × 10-2 Vth (V)6.7 Ion/Ioff104

Figure. Transfer curves in the saturated region

Figure. Transfer curves in the saturated region


Experimental details

Fabrication and evaluation of spin-coated [60]PCBM [P2682]-based OFETs

< Substrate>
  • HMDS-treated Si/SiO2 (thickness of SiO2: 200 nm)

< Self-Assembly Monolayer (SAM) Treatment>
  • 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) [H0089]
    1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
    2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
    3. Exposure to vapor (IPA, 3 min)
    4. UV/O3 treatment (1 h)
    5. Immersion in HMDS (16 h, N2)
    6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)

< Spin-Coating>
  • [60]PCBM [P2682], 15 mg/ml, Chloroform
  • Spin-coating condition: 3000 RPM, 60 sec, N2

< Vacuum Deposition>
  • Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−4 Pa)

< Device configuration>
  • [n+-Si/SiO2 (200 nm) / [60]PCBM [P2682] / Au (40 nm)]
  • Top-Contact Bottom-Gate Type (TCBG)
  • Channel Length: 50 μm
  • Channel width: 1.5 mm

< Evaluation condition>
  • Under N2
  • Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:ID = (W/2L) μ Ci (VG − Vth)2

TCI products used in this experiment

P2682 [60]PCBM
H0089 1,1,1,3,3,3-Hexamethyldisilazane (HMDS)

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