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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 8T
![8T [O0313]](/structure-300/O0313.jpg)
α-Octithiophene
8T
CAS RN: 113728-71-5
Product Number: O0313
Performance of 8T [O0313]-based OFETs
![Fabrication method and evaluation of vacuum-deposited 8T [O0313]](/assets/cms-images/O0313-device-method-structure-en.png)
Table. OFETs Characteristics of 8T [O0313]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub (°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare | Tsub (°C)RT | Polarityp | μ (cm2 V−1 s−1)3.0 × 10-2 | Vth (V)‒13 | Ion/Ioff105 |
Figure. Transfer curves in the saturated region
Experimental details
Fabrication and evaluation of vacuum-deposited 8T [O0313]-based OFETs
< Substrate >
< Vacuum Deposition >
< Device Configuration >
< Evaluation Condition >
< Substrate >
- Bare Si/SiO2 (thickness of SiO2: 200 nm)
< Vacuum Deposition >
- Deposition rate of 8T [O0313] 0.4 Å/s (under a pressure of∼10−4 Pa)
- Substrate temperature during deposition: RT
- Deposition rate of Au: 1.2 Å/s (under a pressure of∼10−4 Pa)
< Device Configuration >
- [n+-Si/SiO2 (200 nm) / 8T [O0313] (80 nm) / Au (40 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation Condition >
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:
ID = (W/2L) μ Ci (VG − Vth)2