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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Fullerene C70
![Fullerene C70 [F1233]](/structure-300/F1233.jpg)
Fullerene C70 (purified by sublimation)
[for organic electronics]
Fullerene C70
CAS RN: 115383-22-7
Product Number: F1233
Performances of C70 [F1233]-based OFETs
![Performances of C70 [F1233]-based OFETs](/assets/cms-images/F1233-device-method-structure-en.png)
Table. OFETs Characteristics of Fullerene C70 [F1233]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub(°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM TreatmentHMDS | Tsub(°C)RT | Polarityn | μ (cm2 V−1 s−1)0.52 | Vth (V)6.7 | Ion/Ioff106 |
| Entry2 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM TreatmentOTS | Tsub(°C)RT | Polarityn | μ (cm2 V−1 s−1)0.55 | Vth (V)8.3 | Ion/Ioff106 |
Figure. Transfer curves in the saturated region
Experimental details
Fabrication and evaluation of vacuum-deposited Fullerene C70 [F1233]-based OFETs
< Substrate>
< Self-Assembly Monolayer (SAM) Treatment>
< Vacuum Deposition>
< Device configuration>
< Evaluation condition>
< Substrate>
- HMDS-treated Si/SiO2 (thickness of SiO2: 200 nm)
- OTS-treated Si/SiO2 (thickness of SiO2: 200 nm)
< Self-Assembly Monolayer (SAM) Treatment>
- 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) [H0089]
- Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
- Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
- Exposure to vapor (IPA, 3 min)
- UV/O3 treatment (1 h)
- Immersion in HMDS (16 h, N2)
- Ultrasonication (Toluene, Acetone, IPA, 10 min each)
- n-Octyltrichlorosilane (OTS) [O0168]
- Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
- Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
- Exposure to vapor (IPA, 3 min)
- UV/O3 treatment (1 h)
- Immersion in OTS solution (0.01 M toluene, 16 h, N2)
- Ultrasonication (Toluene, Acetone, IPA, 10 min each)
< Vacuum Deposition>
- Deposition rate of C70 [F1233] 0.2 Å/s (under a pressure of∼10−5 Pa)
- Substrate temperature during deposition: RT
- Deposition rate of Au: 0.2 Å/s (under a pressure of∼10−5 Pa)
< Device configuration>
- [n+-Si/SiO2 (200 nm) / C70 [F1233] (40 nm) / Au (40 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation condition>
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation:ID = (W/2L) μ Ci (VG − Vth)2