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CAS RN: 135-48-8 | 产品编码: P2524

Pentacene (99.999%, trace metals basis) (purified by sublimation) [for organic electronics]


纯度/分析方法:
别名:
  • 并五苯 (99.999%, 微量金属品) (升华提纯) [用于有机电子]
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100MG
¥620.00
从天津仓库发货 2   18  
1G
¥3,680.00
从天津仓库发货 4   ≥80 
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补充产品信息:

This product is a substitute of Pentacene (purified by sublimation) (Product Number:P0030).
For more information, please refer to the FET evaluation page, the tab [application] below, or a leaflet.

We have demonstrated the fabrication and evaluation of OFET devices by using "Pentacene" (Product Number:P2524) sublimed grade. The device showed good performance with a hole carrier mobility of "μFET: >0.35 cm2/Vs (bare Si/SiO2 substrate)".
<< Device configuration and evaluation method >>
· Device configuration: top-contact type
  [Sin++ / SiO2 (200 nm) / P2524 (60 nm) / Au (60 nm)]
· Substrate treatment (Self-Assembled Monolayer): none
· Device fabrication: vacuum vapor deposition method
  (Channel L = 50 μm , W = 1.5 mm)
· Evaluation condition: nitrogen atmosphere
· Mobility(μFET): calculated from the transfer curves in the saturation regime using the following equation
  ID = (WCi /2L)μFET(VG - VTh)2

The difference between P2524 and P0030 is the following.
Product Number P2524 (This product): Pentacene (99.999%, trace metals basis) (purified by sublimation)
[Specification]

Total Metals Impurities: max. 10.0 ppm

Electron Mobility(μFET): min. 0.35 cm2/Vs (bare Si/SiO2 substrate)


Product Number P0030 : Pentacene (purified by sublimation)
[Specification]

TOF-MS: to pass test

产品编码 P2524
分子式/分子量 C__2__2H__1__4 = 278.35 
外观与形状(20°C) 固体
储存温度 室温 (15°C以下阴凉干燥处)
储存在惰性气体下 存放于惰性气体之中
应避免的情况 光,空气
CAS RN 135-48-8
Reaxys-RN 1912418
PubChem物质ID 354334289
SDBS (AIST Spectral DB) 11257
Merck Index (14) 7107
MDL编号

MFCD00003710

技术规格
Appearance Gray to Dark purple to Black powder to crystal
Total Metals Impurities max. 10.0 ppm
Hole Mobility(mu FET) min. 0.35 cm2/Vs(bare Si/SiO2 substrate)
物性(参考值)
最大吸收波长 577 nm (Toluene)
水溶性 不溶
HOMO能级 -4.9 eV
GHS
相关法规
新化学物质备案回执号 B1A232215181
运输信息
监管条件代码(*)
应用
Organic Field-Effect Transistor (OFET)

The FET performance was significantly improved by Self-Assembled Monolayer (n-Octyltrichlorosilane (OTS)[O0168]); the OTS-treated device demonstrated the highest performance with a hole carrier mobility of 1.52 cm2/Vs and an on/off ratio of 1.5 ×107 (Figure 1).

In the bare device (without SAM), two weak peaks assignable to face-on orientation were observed (Figure 3b, black arrow), which would create the disadvantage of carrier passes parallel to the substrate (Figure 4a). On the other hand, such peaks were not observed in the pentacene film on the OTS-treated substrate (Figure 3b). It is one reason why the mobility was higher in the OTS-treated OFET device.

A part of X-ray diffraction (XRD: Smart Lab) was conducted at Advanced Characterization Nanotechnology Platform of the University of Tokyo, supported by "Nanotechnology Platform" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.


参考文献


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