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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : 10-QTP-10
![10-QTP-10 [D4888]](/structure-300/D4888.jpg)
5,5'''-Didecyl-2,2':5',2'':5'',2'''-quaterthiophene
10-QTP-10
CAS RN: 514188-77-3
Product Number: D4888
Performance of 10-QTP-10 [D4888]-based OFETs
![Fabrication method and evaluation of vacuum-deposited 10-QTP-10 [D4888]](/assets/cms-images/D4888-device-method-structure-en.png)
Table. OFETs Characteristics of 10-QTP-10 [D4888]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub (°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare | Tsub (°C)RT | Polarityp | μ (cm2 V−1 s−1)0.11 | Vth (V)‒6.8 | Ion/Ioff104 |
Figure. Transfer curves in the saturated region and output curves at different gate voltages
Experimental details
Fabrication and evaluation of spin-coated 10-QTP-10 [D4888]-based OFETs
< Substrate>
< Vacuum Deposition>
< Device Configuration>
< Evaluation Condition>
< Substrate>
- Bare Si/SiO2 (thickness of SiO2: 200 nm)
< Vacuum Deposition>
- Deposition rate of 10-QTP-10 [D4888] 0.3 Å/s (under a pressure of∼10−4 Pa)
- Substrate temperature during deposition: RT
- Deposition rate of Au: 0.6 Å/s (under a pressure of∼10−4 Pa)
< Device Configuration>
- [n+-Si/SiO2 (200 nm) / 10-QTP-10 [D4888] (60 nm) / Au (40 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm
< Evaluation Condition>
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2