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Fabrication and Evaluation of Organic Field-Effect Transistors (OFETs) : Pentacene
![TIPS Pentacene [P2524]](/structure-300/P2524.jpg)
Pentacene (99.999%, trace metals basis) (purified by sublimation)
CAS RN: 135-48-8
Product Number: P2524
Performance of Pentacene [P2524]-based OFETs
![Performances of Pentacene [P2524]-based OFETs](/assets/cms-images/P2524-device-method-structure-en.png)
Table. OFETs Characteristics of Pentacene [P2524]-based OFETs
| Entry | Fabrication Method | Device Configuration | SAM Treatment | Tsub (°C) | Polarity | μ (cm2 V−1 s−1) | Vth (V) | Ion/Ioff |
|---|---|---|---|---|---|---|---|---|
| Entry1 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM Treatmentw/o Bare |
Tsub (°C)RT | Polarityp | μ (cm2 V−1 s−1)0.33 | Vth (V)‒15 | Ion/Ioff105 |
| Entry2 | Fabrication MethodVacuum deposition | Device ConfigurationTCBG | SAM TreatmentOTS | Tsub (°C)RT | Polarityp | μ (cm2 V−1 s−1)1.2 | Vth (V)‒7.0 | Ion/Ioff106 |
Figure. Transfer curves in the saturated region and output curves at different gate voltages
Experimental details
Fabrication and evaluation of vacuum-deposited Pentacene [P2524]-based OFETs
< Substrate >
< Self-Assembly Monolayer (SAM) Treatment >
< Vacuum Deposition >
< Device Configuration >
< Evaluation Condition >
< Substrate >
- Bare Si/SiO2 (thickness of SiO2 : 200 nm)
- OTS-treated Si/SiO2 (thickness of SiO2：200 nm)
< Self-Assembly Monolayer (SAM) Treatment >
- n-Octyltrichlorosilane (OTS) [O0168 ]
1. Piranha etching (H2SO4:H2O2=4:1, 80ºC, 2h)
2. Ultrasonication (Deionized water, Acetone, IPA, 10 min each)
3. Exposure to vapor (IPA, 3min)
4. UV/O3 treatment (1h)
5. Immersion in OTS solution (0.01 M toluene, 16h, N2)
6. Ultrasonication (Toluene, Acetone, IPA, 10 min each)
< Vacuum Deposition >
- Deposition rate of Pentacene [P2524 ]: 0.1 Å/s (under a pressure of∼10−5 Pa)
- Substrate temperature during deposition: RT
- Deposition rate of Au: 0.3 Å/s, (under a pressure of ∼10−4 Pa)
< Device Configuration >
- [n+-Si/SiO2 (200 nm) / Pentacene [P2524 ] (60 nm) / Au (60 nm)]
- Top-Contact Bottom-Gate Type (TCBG)
- Channel Length: 50 μm
- Channel width: 1.5 mm: 1.5 mm
< Evaluation Condition >
- Under N2
- Field-effect mobilities (μ) were determined from the transfer curves in the saturation regime using the following equation: ID = (W/2L) μ Ci (VG − Vth)2